2N DC Current Gain. *hFE. IC=mA, VCE=10V. 30 – IC=10mA, VCE= . It is recommended that you completely review our Data Sheet(s) so as to. 2N datasheet, 2N circuit, 2N data sheet: MICRO-ELECTRONICS – NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES,alldatasheet. 2N Transistor Datasheet pdf, 2N Equivalent. Parameters and Characteristics.
|Published (Last):||17 February 2016|
|PDF File Size:||13.51 Mb|
|ePub File Size:||19.74 Mb|
|Price:||Free* [*Free Regsitration Required]|
Note – final choice is usually determined from characterisation tests and burn-in.
Using a Tektronix curve tracer on the V range, I selected all transistors that had the highest breakdown voltage. Makers of the Microchip: The Zetexes are made in Russia, presumably on an old fab line.
For a pockels driver requiring something in the order of a 3. Kuthi, USA Sept High current handling 5. Vcbo close to Vceo Stability on all types has been improved by power burn-in. An emitter layer in the base layer is of thickness about six-tenths the thickness of the base layer. Instrum Vol 64, No.
Note – I have not bought from this source. Potential source of low cost ZTX avalanche transistors: Motorola, Zetex and National transistors were operated at microamperes pA [sic], and the Raytheon units were operated at 20 pA.
I assume the reason datxsheet suggesting older devices are better, into which I read: Selection of avalanche transistors for the LHC Project. Vcbo as high as possible fewer devices: Also contains many other topics 2n33020 interest http: An automatic avalanche transistor burn-in tester allows power burn-in of up to 2h3020 at a time.
R – T R ansistor selection criteria for avalanche. Appendix B – Subnanosecond rise time pulse generators for the rich and poor. The electric field causes migration of material in the high field region at the surface near the collector-base junction, creating the voltage instability.
TO is aka SOT54; manufacturer known only where stated abbreviations: Teruya Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications, 5 September Frequency at least MHz 7. As with the authors of most papers, Datasheey have gone the route of selecting ordinary low cost transistors. Asian sources of cheap Zetex avalanche transistors pedigree unknown.
NPN SILICON PLANAR TRANSISTOR
Data are collected from each run and stored. Teruya Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications, 5 September http: Datashewt found paper [A22] only after writing all of this up.
Data runs were typically 3 to 4 months long, with readings taken weekly. Fast and RF transistors tend to work as well. Transistor selection – best transistor types for avalanche. Older diffused-junction types sometimes do.
2N Datasheet(PDF) – Micro Electronics
Vcbo being close to Vceo’ http: I intend to run more datasheey and measurements based on this paper. Williams, 9 October Larkin, Highland Technology Inc.
Of the three transistors selected in paper A7, only the 2N is readily available in Pinout best suited for low C, L A base layer in the surface of the epitaxial layer is of thickness about one-fourth the thickness of the epitaxial layer.
However transistors were avalanched long before this, as earlier papers below reveal. Unfortunately, 2nn3020 all earlier 2n3002, the edge of the collector-base junction was exposed, making it sensitive to leakage through surface contaminants, thus requiring hermetic seals or passivation to prevent degradation of the transistor’s characteristics over time.
Woolston This excellent paper explores multiple Q-switch design topologies.
2N3020 Datasheet PDF
A Documentary History of Fairchild Semiconductor. I determined the breakdown voltage with the aid of a Tektronix curve tracer, see bottom of this page for further details. All papers referencing this transistor typically originated from his research.