Ease of Paralleling. Maximum Ratings. TOAB. IRF IRF IRF NJ Semi-Conductors encourages customers to verify that datasheets are current. IRF A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power. Part, IRF Category, Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel. Description, A, V, Ohm, N-channel.
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Such statements are not binding statements about the suitability of products for a particular application. Product names and markings noted herein may be trademarks of their respective owners.
Products may be manufactured at one of several qualified locations. Case Temperature td off tf tr Fig.
Drain Current Current regulator Same type as D. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations.
IRF MOSFET Datasheet pdf – Equivalent. Cross Reference Search
The TOAB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. B, Mar dataxheet 8 9 10 Fig.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please note that some Vishay documentation may still make reference to the IEC definition.
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No license, express datashdet implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The low thermal resistance and low package cost of the TOAB contribute to its wide acceptance throughout the industry.
IRF, SiHF Datasheet
B, Mar This datasheet is subject to change without notice. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product datashfet result in personal injury or death. Repetitive rating; pulse width limited by maximum junction temperature see fig.