K9F2G08U0M datasheet, K9F2G08U0M pdf, K9F2G08U0M data sheet, datasheet, data sheet, pdf, Samsung Electronic, FLASH MEMORY. K9F2G08U0M Datasheet PDF Download – FLASH MEMORY, K9F2G08U0M data sheet. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications.

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If erase operation results in an error, map out the failing block and replace it with another block.

The internal high voltage generator is reset when the WP pin is active low. Its value can be determined by the following guidance. Unique ID for Copyright Protection? Page Read and Page Program need the same five address cycles following the required command input. Some other commands, like page read and block erase and page program, require two cycles: Serial access may be done after power-on without latency.

The system design must be able to mask out the invalid block s via address mapping.


The said additional block failure rate does not include those reclaimed blocks. The command register is cleared to wait for the next command, and the Status Register is cleared to value C0h when WP is high. This scheme dramatically reduces pin counts and allows system upgrades to future densities by maintaining consistency in system board design. AC Waveforms for Power Transition 1. The datasjeet of consecutive partial page programming operation within the same page without an intervening erase operation must not exceed 4 times for main array X8 device: To improve the efficiency of memory space, it is recommended that the k9f2g08uu0m or verification failure due to datasheer bit error be reclaimed by ECC without any block replacement.


During transitions, this level may undershoot to SeekIC only pays the seller after confirming you have received your order. This operation is also initiated by writing 00hh to the command register along with five address cycles. Page 35 Draft Date Sep. The following possible failure modes should be considered to implement a highly reliable system. Month Sales Transactions. Since the time-consuming cycles of serial access and re-loading cycles are removed, the system performance is improved.

But if the soure page has a bit error for charge loss, accumulated copy-back operations could also accumulate bit errors. It is an open drain output and does k9f2g08um float to high-z condition when the chip is deselected or when outputs are disabled. Data in the data page can be read out at 50ns 30ns, only X8 device cycle time per byte or word X16 device. Two types of datashwet are available: The benefit is especially obvious when a portion of a block is updated and the rest of the block also need to be vatasheet to the newly assigned free block.

K9F2G08U0M Datasheet PDF

The column address for the next data, which will be entered, may be changed to the address which follows random data input command 85h. The operation for performing a copy-back program is a sequential execution of page-read without serial access and copying-program with the address of destination page.


K9f2g08j0m VCC ibusy 1.

For this reason, two bit ECC is recommended for copy-back operation. It returns to high when the internal controller has finished the operation. In addition to the enhanced architecture and datasueet, the device incorporates copy-back program feature from one page to another page without need for transporting the data to and from the external buffer memory.

This two-step sequence of setup followed by execution command ensures that memory contents are not accidentally erased due to external noise conditions. Data is valid tREA after the falling edge of RE which also increments the internal column address counter by one. The bytes X8 device or words X16 device of data within the selected page are transferred to the data registers in less than 25?

Since the device has 1 page of cache memory, serial data input may be executed while data stored in data register are programmed into memory cell. Datasheeh Erase Confirm command D0h following the block address loading initiates the internal erasing process. An internal voltage detector enables auto-page read functions when Vcc reaches about 1. The device may output random data in a page instead of the consecutive sequential k9f2g08k0m by writing random data output command.

Random page address programming is prohibited.